Capacity: 512MB, 1GB, 2GB
Features: Scalable to next-generations of DRAM such as DDR3
Point to point connection to reduce the number of pins for signal transfer
Better throughput and lower latency
Pin count: 240 pin
Supply Voltages: DRAM & AMB I/O (1.8V) AMB core power (1.5V), Vtt (0.9V), Vdd-spd (3.3V)
DRAM Interface: SSTL_18
PCB Layer: 6 Layers
Features: Scalable to next-generations of DRAM such as DDR3
Point to point connection to reduce the number of pins for signal transfer
Better throughput and lower latency
Pin count: 240 pin
Supply Voltages: DRAM & AMB I/O (1.8V) AMB core power (1.5V), Vtt (0.9V), Vdd-spd (3.3V)
DRAM Interface: SSTL_18
PCB Layer: 6 Layers